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RCX081N20

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RCX081N20 Image

The RCX081N20 from ROHM Semiconductor is a MOSFET with Continous Drain Current -8 to 8 A, Drain Source Resistance 550 to 1500 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.25 to 5.25 V. Tags: Through Hole. More details for RCX081N20 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RCX081N20
  • Manufacturer
    ROHM Semiconductor
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8 to 8 A
  • Drain Source Resistance
    550 to 1500 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.25 to 5.25 V
  • Gate Charge
    8.5 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    150 Degree C
  • Industry
    Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220FM
  • Applications
    Switching Power Supply, Automotive Motor Drive, Automotive Solenoid Drive

Technical Documents
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