1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. RCX200N20

RCX200N20

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

RCX200N20 Image

The RCX200N20 from ROHM Semiconductor is a MOSFET with Continous Drain Current -20 to 20 A, Drain Source Resistance 100 to 310 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for RCX200N20 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RCX200N20
  • Manufacturer
    ROHM Semiconductor
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -20 to 20 A
  • Drain Source Resistance
    100 to 310 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    40 nC
  • Power Dissipation
    48 W
  • Temperature operating range
    150 Degree C
  • Industry
    Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220FM
  • Applications
    Switching Power Supply, Automotive Motor Drive, Automotive Solenoid Drive

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products