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RD3E08BBJHRBTL

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The RD3E08BBJHRBTL from ROHM Semiconductor is a MOSFET with Continous Drain Current -80 to 80 A, Drain Source Resistance 2.9 to 5.0 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.0 to -2.5 V. Tags: Surface Mount. More details for RD3E08BBJHRBTL can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3E08BBJHRBTL
  • Manufacturer
    ROHM Semiconductor
  • Description
    -30 V, -80 to 80 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -80 to 80 A
  • Drain Source Resistance
    2.9 to 5.0 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.0 to -2.5 V
  • Gate Charge
    77 to 150 nC
  • Switching Speed
    19 to 220 ns
  • Power Dissipation
    142 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Note
    Input Capacitance :- 7500 pF

Technical Documents
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