1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. RD3G03BAT

RD3G03BAT

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

RD3G03BAT Image

The RD3G03BAT from ROHM Semiconductor is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 15 to 24 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Through Hole. More details for RD3G03BAT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RD3G03BAT
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    15 to 24 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    19.5 to 38 nC
  • Power Dissipation
    56 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    DPAK, TO-252
  • Applications
    Switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products