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RD3G600GN

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The RD3G600GN from ROHM Semiconductor is a MOSFET with Continous Drain Current -60 to 60 A, Drain Source Resistance 2.8 to 4.3 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RD3G600GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3G600GN
  • Manufacturer
    ROHM Semiconductor
  • Description
    40 V, 46.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -60 to 60 A
  • Drain Source Resistance
    2.8 to 4.3 Milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    46.5 nC
  • Power Dissipation
    40 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    Switching

Technical Documents
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