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RD3H045SP

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The RD3H045SP from ROHM Semiconductor is a MOSFET with Continous Drain Current -4.5 to 4.5 A, Drain Source Resistance 110 to 260 Milliohm, Drain Source Breakdown Voltage -45 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for RD3H045SP can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3H045SP
  • Manufacturer
    ROHM Semiconductor
  • Description
    -45 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.5 to 4.5 A
  • Drain Source Resistance
    110 to 260 Milliohm
  • Drain Source Breakdown Voltage
    -45 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    12 nC
  • Power Dissipation
    15 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching

Technical Documents
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