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RD3L04BBLHRBTL

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The RD3L04BBLHRBTL from ROHM Semiconductor is a MOSFET with Continous Drain Current -40 to 40 A, Drain Source Resistance 10.5 to 19.1 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for RD3L04BBLHRBTL can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3L04BBLHRBTL
  • Manufacturer
    ROHM Semiconductor
  • Description
    60 V, -40 to 40 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -40 to 40 A
  • Drain Source Resistance
    10.5 to 19.1 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    8.0 to 12.1 nC
  • Switching Speed
    5.7 to 31 ns
  • Power Dissipation
    53 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252 (DPAK)
  • Note
    Input Capacitance :- 840 pF

Technical Documents
View details on the manufacturer's website
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