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RD3N06BATTL1

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The RD3N06BATTL1 from ROHM Semiconductor is a MOSFET with Continous Drain Current -60 to 60 A, Drain Source Resistance 19.5 to 29.0 milli-ohm, Drain Source Breakdown Voltage -80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.0 to -4.0 V. Tags: Surface Mount. More details for RD3N06BATTL1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3N06BATTL1
  • Manufacturer
    ROHM Semiconductor
  • Description
    -80 V, -60 to 60 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -60 to 60 A
  • Drain Source Resistance
    19.5 to 29.0 milli-ohm
  • Drain Source Breakdown Voltage
    -80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.0 to -4.0 V
  • Gate Charge
    67 to 110 nC
  • Switching Speed
    27 to 265 ns
  • Power Dissipation
    101 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching, Motor drives
  • Note
    Input Capacitance :- 4950 pF

Technical Documents
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