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RD3N07BBHTL1

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The RD3N07BBHTL1 from ROHM Semiconductor is a MOSFET with Continous Drain Current -105 to 105 A, Drain Source Resistance 3.7 to 6.3 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for RD3N07BBHTL1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3N07BBHTL1
  • Manufacturer
    ROHM Semiconductor
  • Description
    80 V, -105 to 105 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -105 to 105 A
  • Drain Source Resistance
    3.7 to 6.3 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    28 to 46 nC
  • Switching Speed
    16 to 63 ns
  • Power Dissipation
    89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching, Motor drives, DC/DC converter
  • Note
    Input Capacitance :- 3280 pF

Technical Documents
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