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RD3P08BBD

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The RD3P08BBD from ROHM Semiconductor is a MOSFET with Continous Drain Current -80 to 80 A, Drain Source Resistance 8.6 to 16 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RD3P08BBD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3P08BBD
  • Manufacturer
    ROHM Semiconductor
  • Description
    100 V, 37 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -80 to 80 A
  • Drain Source Resistance
    8.6 to 16 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    37 nC
  • Power Dissipation
    119 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    Switching, Power tool

Technical Documents
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