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RD3P130SP

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The RD3P130SP from ROHM Semiconductor is a MOSFET with Continous Drain Current -13 to 13 A, Drain Source Resistance 135 to 230 Milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for RD3P130SP can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3P130SP
  • Manufacturer
    ROHM Semiconductor
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -13 to 13 A
  • Drain Source Resistance
    135 to 230 Milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    40 nC
  • Power Dissipation
    20 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching

Technical Documents
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