The RD3S100CN from ROHM Semiconductor is a MOSFET with Continous Drain Current -10 to 10 A, Drain Source Resistance 130 to 195 milliohm, Drain Source Breakdown Voltage 190 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.5 to 2.5 V. Tags: Surface Mount. More details for RD3S100CN can be seen below.