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RD3T100CN

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The RD3T100CN from ROHM Semiconductor is a MOSFET with Continous Drain Current -10 to 10 A, Drain Source Resistance 140 to 182 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.25 to 5.25 V. Tags: Surface Mount. More details for RD3T100CN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3T100CN
  • Manufacturer
    ROHM Semiconductor
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 to 10 A
  • Drain Source Resistance
    140 to 182 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.25 to 5.25 V
  • Gate Charge
    25 nC
  • Power Dissipation
    85 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252 (DPAK)
  • Applications
    Switching Power Supply

Technical Documents
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