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RE1C001UN

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The RE1C001UN from ROHM Semiconductor is a MOSFET with Continous Drain Current -0.1 to 0.1 A, Drain Source Resistance 2500 to 18000 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for RE1C001UN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RE1C001UN
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, , N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.1 to 0.1 A
  • Drain Source Resistance
    2500 to 18000 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Power Dissipation
    0.15 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-416FL
  • Applications
    Switching

Technical Documents
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