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RF4C050AP

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RF4C050AP Image

The RF4C050AP from ROHM Semiconductor is a MOSFET with Continous Drain Current -10 to 10 A, Drain Source Resistance 18 to 65 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 0 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for RF4C050AP can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF4C050AP
  • Manufacturer
    ROHM Semiconductor
  • Description
    -20 V, 55 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 to 10 A
  • Drain Source Resistance
    18 to 65 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 0 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    55 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN2020-8S
  • Applications
    Switching, Load switch

Technical Documents
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