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RF4C100BC

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RF4C100BC Image

The RF4C100BC from ROHM Semiconductor is a MOSFET with Continous Drain Current -10 to 10 A, Drain Source Resistance 12 to 37.6 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for RF4C100BC can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF4C100BC
  • Manufacturer
    ROHM Semiconductor
  • Description
    -20 V, 23.5 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 to 10 A
  • Drain Source Resistance
    12 to 37.6 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Gate Charge
    23.5 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN2020-8S
  • Applications
    Switching, Load switch

Technical Documents
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