The RF4E100AJ from ROHM Semiconductor is a MOSFET with Continous Drain Current -10 to 10 A, Drain Source Resistance 99.4 to 17.9 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for RF4E100AJ can be seen below.