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RF4E100AJ

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RF4E100AJ Image

The RF4E100AJ from ROHM Semiconductor is a MOSFET with Continous Drain Current -10 to 10 A, Drain Source Resistance 99.4 to 17.9 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for RF4E100AJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF4E100AJ
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, 13 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 to 10 A
  • Drain Source Resistance
    99.4 to 17.9 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    13 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    0 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN20208S
  • Applications
    Switching, DC/DC converter, Battery switch

Technical Documents
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