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RF4G060AT

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RF4G060AT Image

The RF4G060AT from ROHM Semiconductor is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 32 to 51 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for RF4G060AT can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF4G060AT
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    32 to 51 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    8.5 to 17.2 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN2020-8S, HUML2020L8
  • Applications
    Switching, Load Switch

Technical Documents
View details on the manufacturer's website
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