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RH6L040BG

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The RH6L040BG from ROHM Semiconductor is a MOSFET with Continous Drain Current -65 to 65 A, Drain Source Resistance 5.5 to 11.2 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RH6L040BG can be seen below.

Product Specifications

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Product Details

  • Part Number
    RH6L040BG
  • Manufacturer
    ROHM Semiconductor
  • Description
    60 V, 18.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -65 to 65 A
  • Drain Source Resistance
    5.5 to 11.2 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    18.8 nC
  • Power Dissipation
    59 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSMT8
  • Applications
    Switching, Moter drives, DC/DC converter

Technical Documents
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