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RHU002N06FRA

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The RHU002N06FRA from ROHM Semiconductor is a MOSFET with Continous Drain Current -0.2 to 0.2 A, Drain Source Resistance 1700 to 4000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RHU002N06FRA can be seen below.

Product Specifications

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Product Details

  • Part Number
    RHU002N06FRA
  • Manufacturer
    ROHM Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.2 to 0.2 A
  • Drain Source Resistance
    1700 to 4000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    4.4 nC
  • Power Dissipation
    0.2 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Applications
    Switching

Technical Documents
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