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RJ1N10BBHTL1

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The RJ1N10BBHTL1 from ROHM Semiconductor is a MOSFET with Continous Drain Current -235 to 235 A, Drain Source Resistance 1.66 to 2.70 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for RJ1N10BBHTL1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJ1N10BBHTL1
  • Manufacturer
    ROHM Semiconductor
  • Description
    80 V, -235 to 235 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -235 to 235 A
  • Drain Source Resistance
    1.66 to 2.70 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    120 to 185 nC
  • Switching Speed
    58 to 340 ns
  • Power Dissipation
    189 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263AB-3LSHYAD
  • Applications
    Switching, Motor drives, DC/DC converter
  • Note
    Input Capacitance :- 11800 pF

Technical Documents
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