The RJP020N06 from ROHM Semiconductor is a MOSFET with Continous Drain Current -2 to 2 A, Drain Source Resistance 165 to 300 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for RJP020N06 can be seen below.