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RJP020N06

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The RJP020N06 from ROHM Semiconductor is a MOSFET with Continous Drain Current -2 to 2 A, Drain Source Resistance 165 to 300 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for RJP020N06 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJP020N06
  • Manufacturer
    ROHM Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 to 2 A
  • Drain Source Resistance
    165 to 300 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Gate Charge
    10 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT89
  • Applications
    Switching

Technical Documents
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