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RQ1C075UNHZG

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RQ1C075UNHZG Image

The RQ1C075UNHZG from ROHM Semiconductor is a MOSFET with Continous Drain Current -7.5 to 7.5 A, Drain Source Resistance 11 to 40 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for RQ1C075UNHZG can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ1C075UNHZG
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -7.5 to 7.5 A
  • Drain Source Resistance
    11 to 40 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Gate Charge
    18 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents
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