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RQ3E120AT

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The RQ3E120AT from ROHM Semiconductor is a MOSFET with Continous Drain Current -39 to 39 A, Drain Source Resistance 6.1 to 11.3 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for RQ3E120AT can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ3E120AT
  • Manufacturer
    ROHM Semiconductor
  • Description
    -30 V, 62 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -39 to 39 A
  • Drain Source Resistance
    6.1 to 11.3 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    62 nC
  • Power Dissipation
    20 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSMT8
  • Applications
    Switching

Technical Documents
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