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RQ3G110AT

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RQ3G110AT Image

The RQ3G110AT from ROHM Semiconductor is a MOSFET with Continous Drain Current 11 to 35 A, Drain Source Resistance 9.8 to 15.7 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for RQ3G110AT can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ3G110AT
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 to 35 A
  • Drain Source Resistance
    9.8 to 15.7 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    20 to 46 nC
  • Power Dissipation
    2 to 20 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSMT8
  • Applications
    Switching

Technical Documents
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