The RQ3L090GN from ROHM Semiconductor is a MOSFET with Continous Drain Current -30 to 30 A, Drain Source Resistance 10.3 to 21.4 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.7 V. Tags: Surface Mount. More details for RQ3L090GN can be seen below.