1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. RQ3N040ATTB1

RQ3N040ATTB1

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

The RQ3N040ATTB1 from ROHM Semiconductor is a MOSFET with Continous Drain Current -10 to 10 A, Drain Source Resistance 97 to 146 milli-ohm, Drain Source Breakdown Voltage -80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.0 to -4.0 V. Tags: Surface Mount. More details for RQ3N040ATTB1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RQ3N040ATTB1
  • Manufacturer
    ROHM Semiconductor
  • Description
    -80 V, -10 to 10 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 to 10 A
  • Drain Source Resistance
    97 to 146 milli-ohm
  • Drain Source Breakdown Voltage
    -80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.0 to -4.0 V
  • Gate Charge
    14 to 22 nC
  • Switching Speed
    10 to 69 ns
  • Power Dissipation
    2 to 15 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSMT8
  • Applications
    Switching, Motor drives
  • Note
    Input Capacitance :- 930 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products