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RQ3P300BH

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The RQ3P300BH from ROHM Semiconductor is a MOSFET with Continous Drain Current 10 to 39 A, Drain Source Resistance 11.9 to 24 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RQ3P300BH can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ3P300BH
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 to 39 A
  • Drain Source Resistance
    11.9 to 24 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    9 to 36 nC
  • Power Dissipation
    2 to 32 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSMT8
  • Applications
    Primary side switch, Motor drives, DC/DC Converter

Technical Documents
View details on the manufacturer's website
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