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RQ5H020SP

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The RQ5H020SP from ROHM Semiconductor is a MOSFET with Continous Drain Current -2 to 2 A, Drain Source Resistance 130 to 280 Milliohm, Drain Source Breakdown Voltage -45 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for RQ5H020SP can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ5H020SP
  • Manufacturer
    ROHM Semiconductor
  • Description
    -45 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 to 2 A
  • Drain Source Resistance
    130 to 280 Milliohm
  • Drain Source Breakdown Voltage
    -45 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    4.5 nC
  • Power Dissipation
    1 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSMT3
  • Applications
    Switching

Technical Documents
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