1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. RQ6C050UN

RQ6C050UN

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

RQ6C050UN Image

The RQ6C050UN from ROHM Semiconductor is a MOSFET with Continous Drain Current -5 to 5 A, Drain Source Resistance 22 to 80 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for RQ6C050UN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RQ6C050UN
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, 12 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5 to 5 A
  • Drain Source Resistance
    22 to 80 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Gate Charge
    12 nC
  • Power Dissipation
    1.25 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-457T
  • Applications
    Switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products