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RQ6E055BN

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RQ6E055BN Image

The RQ6E055BN from ROHM Semiconductor is a MOSFET with Continous Drain Current -5.5 to 5.5 A, Drain Source Resistance 19 to 39 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RQ6E055BN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ6E055BN
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, 8.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.5 to 5.5 A
  • Drain Source Resistance
    19 to 39 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    8.6 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    0 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-457T
  • Applications
    Switching

Technical Documents
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