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RQ6G050AT

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The RQ6G050AT from ROHM Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 31 to 49 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Through Hole. More details for RQ6G050AT can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ6G050AT
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    31 to 49 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    11 to 22 nC
  • Power Dissipation
    0.95 to 1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SOT-457T, SC-95, TSMT6
  • Applications
    Switching, Load Switch

Technical Documents
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