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RQ7G080BG

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The RQ7G080BG from ROHM Semiconductor is a MOSFET with Continous Drain Current -8 to 8 A, Drain Source Resistance 12.7 to 24 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RQ7G080BG can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ7G080BG
  • Manufacturer
    ROHM Semiconductor
  • Description
    40 V, 10.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8 to 8 A
  • Drain Source Resistance
    12.7 to 24 Milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    10.6 nC
  • Power Dissipation
    1.5 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents
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