The RS1G150MN from ROHM Semiconductor is a MOSFET with Continous Drain Current -43 to 43 A, Drain Source Resistance 7.6 to 13.3 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RS1G150MN can be seen below.