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RS1L145GN

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The RS1L145GN from ROHM Semiconductor is a MOSFET with Continous Drain Current -47 to 47 A, Drain Source Resistance 6.7 to 14.1 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.7 V. Tags: Surface Mount. More details for RS1L145GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RS1L145GN
  • Manufacturer
    ROHM Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -47 to 47 A
  • Drain Source Resistance
    6.7 to 14.1 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.7 V
  • Gate Charge
    37 nC
  • Power Dissipation
    31 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSOP8S
  • Applications
    Switching

Technical Documents
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