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RS7E200BGTB1

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The RS7E200BGTB1 from ROHM Semiconductor is a MOSFET with Continous Drain Current -390 to 390 A, Drain Source Resistance 0.53 to 1.06 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for RS7E200BGTB1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RS7E200BGTB1
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, -390 to 390 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -390 to 390 A
  • Drain Source Resistance
    0.53 to 1.06 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    60 to 135 nC
  • Switching Speed
    40 to 220 ns
  • Power Dissipation
    3 to 180 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5060-8S
  • Applications
    Switching, Motor drives, DC/DC converter
  • Note
    Input Capacitance :- 9500 pF

Technical Documents
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