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RTQ025P02HZG

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RTQ025P02HZG Image

The RTQ025P02HZG from ROHM Semiconductor is a MOSFET with Continous Drain Current -2.5 to 2.5 A, Drain Source Resistance 72 to 190 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -2 to -0.7 V. Tags: Surface Mount. More details for RTQ025P02HZG can be seen below.

Product Specifications

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Product Details

  • Part Number
    RTQ025P02HZG
  • Manufacturer
    ROHM Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.5 to 2.5 A
  • Drain Source Resistance
    72 to 190 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -2 to -0.7 V
  • Gate Charge
    6.4 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-457T
  • Applications
    Switching

Technical Documents
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