The RU1C002ZP from ROHM Semiconductor is a MOSFET with Continous Drain Current -0.2 to 0.2 A, Drain Source Resistance 800 to 9600 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for RU1C002ZP can be seen below.
