The RV3C002UN from ROHM Semiconductor is a MOSFET with Continous Drain Current -0.15 to 0.15 A, Drain Source Resistance 1.4 to 5.4 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.3 to 0.8 V. Tags: Surface Mount. More details for RV3C002UN can be seen below.