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RV4C020ZPHZG

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RV4C020ZPHZG Image

The RV4C020ZPHZG from ROHM Semiconductor is a MOSFET with Continous Drain Current -2 to 2 A, Drain Source Resistance 180 to 560 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.3 to -0.3 V. Tags: Surface Mount. More details for RV4C020ZPHZG can be seen below.

Product Specifications

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Product Details

  • Part Number
    RV4C020ZPHZG
  • Manufacturer
    ROHM Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 to 2 A
  • Drain Source Resistance
    180 to 560 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.3 to -0.3 V
  • Gate Charge
    2 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN1616-6W
  • Applications
    Switching circuits, High speed line driver, High side load switch

Technical Documents
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