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RX3G18BGN

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RX3G18BGN Image

The RX3G18BGN from ROHM Semiconductor is a MOSFET with Continous Drain Current -180 to 180 A, Drain Source Resistance 1.17 to 1.87 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for RX3G18BGN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RX3G18BGN
  • Manufacturer
    ROHM Semiconductor
  • Description
    40 V, 165 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -180 to 180 A
  • Drain Source Resistance
    1.17 to 1.87 Milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    165 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    0 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Switching

Technical Documents
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