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RX3N07BBHC16

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The RX3N07BBHC16 from ROHM Semiconductor is a MOSFET with Continous Drain Current -100 to 100 A, Drain Source Resistance 4.2 to 7.1 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for RX3N07BBHC16 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RX3N07BBHC16
  • Manufacturer
    ROHM Semiconductor
  • Description
    80 V, -100 to 100 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -100 to 100 A
  • Drain Source Resistance
    4.2 to 7.1 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    28 to 46 nC
  • Switching Speed
    16 to 63 ns
  • Power Dissipation
    89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Switching, Motor drives, DC/DC converter
  • Note
    Input Capacitance :- 3820 pF

Technical Documents
View details on the manufacturer's website
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