S2308

Note : Your request will be directed to ROHM Semiconductor.

The S2308 from ROHM Semiconductor is a MOSFET with Continous Drain Current 14 A, Drain Source Resistance 280 to 388 Milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -6 to 22 V, Gate Source Threshold Voltage 1.6 to 4 V. Tags: Die. More details for S2308 can be seen below.

Product Specifications

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Product Details

Part Number
S2308
Manufacturer
ROHM Semiconductor
Description
1200 V, 36 nC, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Technology

SiC
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

14 A
Drain Source Resistance

280 to 388 Milliohm
Drain Source Breakdown Voltage

1200 V
Gate Source Voltage

-6 to 22 V
Gate Source Threshold Voltage

1.6 to 4 V
Gate Charge

36 nC
Industry

Industrial, Commercial
RoHS Compliant

Yes
Package Type

Die
Applications

Solar inverters, DC/DC converters, Switch mode power supplies, Induction heating, Motor drives