1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. S4602

S4602

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

The S4602 from ROHM Semiconductor is a MOSFET with Continous Drain Current 81 A, Drain Source Resistance 18 to 36 Milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -4 to 21 V, Gate Source Threshold Voltage 2.8 to 4.8 V. Tags: Die. More details for S4602 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    S4602
  • Manufacturer
    ROHM Semiconductor
  • Description
    1200 V, 170 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    81 A
  • Drain Source Resistance
    18 to 36 Milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -4 to 21 V
  • Gate Source Threshold Voltage
    2.8 to 4.8 V
  • Gate Charge
    170 nC
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Applications
    Solar inverters, DC/DC converters, Switch mode power supplies, Induction heating, Motor drives

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products