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SCT4062KR

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SCT4062KR Image

The SCT4062KR from ROHM Semiconductor is a MOSFET with Continous Drain Current 26 A, Drain Source Resistance 62 to 124 Milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -4 to 21 V, Gate Source Threshold Voltage 2.8 to 4.8 V. Tags: Through Hole. More details for SCT4062KR can be seen below.

Product Specifications

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Product Details

  • Part Number
    SCT4062KR
  • Manufacturer
    ROHM Semiconductor
  • Description
    1200 V, 64 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    26 A
  • Drain Source Resistance
    62 to 124 Milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -4 to 21 V
  • Gate Source Threshold Voltage
    2.8 to 4.8 V
  • Gate Charge
    64 nC
  • Power Dissipation
    115 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-4L
  • Applications
    Solar inverters, DC/DC converters, Switch mode power supplies, Induction heating, Motor drives

Technical Documents
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