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SH8MD5HTB1

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The SH8MD5HTB1 from ROHM Semiconductor is a MOSFET with Continous Drain Current -3.5 to 3.5 A, Drain Source Resistance 89 to 156 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for SH8MD5HTB1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SH8MD5HTB1
  • Manufacturer
    ROHM Semiconductor
  • Description
    80 V, -3.5 to 3.5 A, N-Channel, P- Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P- Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.5 to 3.5 A
  • Drain Source Resistance
    89 to 156 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    2.0 to 3.1 nC
  • Switching Speed
    4.6 to 12.0 ns
  • Power Dissipation
    1.4 to 2.0 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP8
  • Applications
    Switching, Motor drives
  • Note
    Input Capacitance :- 90 pF

Technical Documents
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