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SP8K80

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SP8K80 Image

The SP8K80 from ROHM Semiconductor is a MOSFET with Continous Drain Current -0.5 to 0.5 A, Drain Source Resistance 900 to 11700 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for SP8K80 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SP8K80
  • Manufacturer
    ROHM Semiconductor
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.5 to 0.5 A
  • Drain Source Resistance
    900 to 11700 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    3.8 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP8
  • Applications
    Switching Power Supply

Technical Documents
View details on the manufacturer's website
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