The SP8M4HZG from ROHM Semiconductor is a MOSFET with Continous Drain Current -9 to 9 A, Drain Source Resistance 12 to 42 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to 2.5 V. Tags: Surface Mount. More details for SP8M4HZG can be seen below.