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US5U2

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The US5U2 from ROHM Semiconductor is a MOSFET with Continous Drain Current -1.4 to 1.4 A, Drain Source Resistance 170 to 380 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for US5U2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    US5U2
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.4 to 1.4 A
  • Drain Source Resistance
    170 to 380 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    2 nC
  • Power Dissipation
    0.7 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-353T
  • Applications
    Switching

Technical Documents
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