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US6M1

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The US6M1 from ROHM Semiconductor is a MOSFET with Continous Drain Current -1.4 to 1.4 A, Drain Source Resistance 170 to 800 milliohm, Drain Source Breakdown Voltage -20 to 30 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage -2 to 2.5 V. Tags: Surface Mount. More details for US6M1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    US6M1
  • Manufacturer
    ROHM Semiconductor
  • Description
    -20 to 30 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -1.4 to 1.4 A
  • Drain Source Resistance
    170 to 800 milliohm
  • Drain Source Breakdown Voltage
    -20 to 30 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    -2 to 2.5 V
  • Gate Charge
    1.4 to 2 nC
  • Power Dissipation
    1 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363T
  • Applications
    Power switching, DC / DC converter

Technical Documents
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